RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. This device has an internal monolithic zener diode from gate to source for ESD protection.
The RDO1MUS2 is a silicon RF power MOSFET designed for VHF/UHF RF amplifier applications. It features an internal monolithic Zener diode for ESD protection and is RoHS compliant. The device is intended for use in high‑power output stages of mobile radio sets and other RF equipment.
The datasheet provides absolute maximum ratings, electrical characteristics, typical performance curves, S‑parameter data, and detailed safety precautions for handling and circuit design. Users are advised to follow the listed precautions to avoid overheating, fire hazards, and ESD damage.
| Drain Current (ID) | 600 mA |
|---|---|
| Storage Temperature (Tstg) | -40 °C to +125 °C |
| Thermal Resistance (Rth j‑c) | 34.5 °C/W |
The maximum drain current is specified as 600 mA.
Yes, the RDO1MUS2 is listed as RoHS compliant.
The device can be stored from –40 °C up to +125 °C.