The RA60H4452M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to 520-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the nominal output signal (Pout=60W) attenuates up to 60 dB. The output power and the drain current increase as the gate voltage increases. The output power and the drain current increase substantially with the gate voltage around 0V(minimum). The nominal output power becomes available at the state that VGG is 4V (typical) and 5V (maximum). At VGG=5V, the typical gate currents are 5mA.This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.
The RA60H4452M1 is a 60‑watt RF MOSFET power‑amplifier module designed for 12.5‑V mobile radios operating in the 440‑520 MHz band. It can be driven directly from a battery, with output power controlled by the gate voltage.
Key features include enhancement‑mode MOSFET transistors, a metal‑shielded package (67 × 19.4 × 9.9 mm), low‑power gate control (≈5 mA at 5 V), and RoHS compliance. The document details electrical ratings, typical performance curves, mounting recommendations, and safety precautions for reliable operation.
| Frequency Range | 440‑520 MHz |
|---|---|
| Output Power | 60 W |
| Gate Voltage (typical) | 5 V |
| Module Size | 67 × 19.4 × 9.9 mm |
| Total Efficiency | 40 % |
| Operating Temperature Range | -30 °C to +100 °C |
| Storage Temperature Range | -40 °C to +110 °C |
A gate voltage of about 4 V (typical) to 5 V (maximum) provides the nominal 60 W output power.
The module is sensitive to ESD voltages down to 1000 V, so appropriate ESD precautions are required.
RoHS compliance is indicated by the letter “G” after the lot marking.