This application note describes the electrostatic discharge test results for RA60H4452M1 and RA60H4047M1.
This application note from Mitsubishi Electric presents electro‑static discharge (ESD) test results for the silicon RF power semiconductors RA60H4452M1 and RA60H4047M1, which use MOS‑FET devices. It explains the lower surge endurance of MOS‑FETs compared with silicon bipolar devices and the risk of burn‑out when static electricity is applied.
The document details the test setup, including a block diagram, pin assignments, and human‑model test conditions (C=100 pF, R=1.5 kΩ, 100 V step up to 6000 V). Test results for various pin‑to‑flange polarity combinations are listed, showing voltage levels that caused device failure.
| Output Power | >60 W @440‑520 MHz |
|---|---|
| Supply Voltage (Vdd) | 12.5 V |
| Test Capacitance | 100 pF |
| Discharge Voltage Step | 100 V (max 6000 V) |
Both parts use MOS‑FET devices.
MOS‑FET devices have lower surge endurance than silicon bipolar devices, so static discharge can cause burn‑out.
The test used a 100 pF capacitor, 1.5 kΩ resistor, and a 100 V step increase up to a maximum of 6000 V.
Failure occurred at 1400 V for the pin‑to‑flange positive polarity.