The MGF1801BT is a medium-power GaAs FET with an N-channel Schottky gate, designed for use in S to X band amplifiers and oscillators. This device has high linear power gain and high P1dB.
The MGF1801BT is a medium‑power GaAs FET with an N‑channel Schottky gate, intended for S‑ to X‑band amplifiers and oscillators. The hermetically sealed metal‑ceramic package provides low parasitic losses and is supplied in a 24‑pin tape format.
The document lists key features such as high linear power gain (GLP≈9 dB at 8 GHz) and high output power (≈23 dBm at 8 GHz), recommended bias conditions (VDS = 6 V, Id = 100 mA), absolute maximum ratings, and typical electrical characteristics measured at 25 °C.
| Gate‑to‑drain breakdown voltage (V_GDO) | -8 V |
|---|---|
| Gate‑to‑source breakdown voltage (V_GSO) | -8 V |
| Drain current (I_D) | 250 mA |
| Reverse gate current (I_GR) | -0.6 mA |
| Forward gate current (I_GF) | 1.5 mA |
| Total power dissipation (P_T) | 1.2 W |
| Maximum channel temperature (T_ch) | 175 °C |
| Storage temperature range (T_stg) | -65 °C to +175 °C |
| Linear power gain (GLP) typical | 9.0 dB @ 8 GHz |
| Output power (P_idB) typical | 23 dBm @ 8 GHz |
The recommended bias is VDS = 6 V with a drain current of 100 mA.
The device can handle a maximum drain current of 250 mA.