The document describes MGF1801B, a high-power GaAs FET designed for use in S to X band amplifiers and oscillators. It features high linear power gain and high P1dB. It is suitable for S to X band medium-power amplifiers and oscillators.
The MGF1801B is a medium‑power N‑channel GaAs FET designed for S‑ to X‑band amplifiers and oscillators. The hermetically sealed metal‑ceramic package provides low parasitic losses and is suitable for microstrip circuits.
The document lists electrical characteristics, absolute maximum ratings, typical performance curves and S‑parameter data, together with safety and bias recommendations for designers.
| Gate to drain breakdown voltage (Vgdr) | -8 V |
|---|---|
| Gate to source breakdown voltage (Vgsr) | -8 V |
| Gate to source leakage current | 20 µA |
| Saturated drain current (IDss) | 250 mA |
| Gate to source cut‑off voltage (VGS(off)) | 15‑45 V |
| Linear Power Gain (GLP) at 8 GHz | 7‑9 dB |
| Output power at 1 dB gain compression (PidB) at 8 GHz | 21.8‑23 dBm |
| Thermal resistance (RθJC) | 125 °C/W |
The saturated drain current rating is 250 mA.
The linear power gain is between 7 dB and 9 dB.
The gate‑to‑drain breakdown voltage is limited to –8 V.