The MGF0906B is a GaAs FET with an N-channel schottky gate, designed for use in UHF band amplifiers. The device features high output power, high power gain and high power added efficiency. It can be used for UHF Band power amplifiers.
The MGF0906B is a high‑power GaAs field‑effect transistor with an N‑channel Schottky gate, intended for use in UHF band power amplifiers. It is supplied in a hermetically sealed metal‑ceramic package and is specified for operation around 2.3 GHz.
The datasheet provides absolute maximum ratings, recommended bias conditions, typical electrical characteristics, S‑parameter data and safety notices. It is aimed at designers who need detailed performance parameters for circuit design and simulation.
| P1dB | 37.0 dBm @ 2.3 GHz |
|---|---|
| Gate‑to‑Drain Voltage (VGDO) | -15 V |
| Gate‑to‑Source Voltage (VGSO) | -15 V |
| Maximum Drain Current (ID) | 3 A |
The absolute maximum drain current is 3 A.
Key figures such as P1dB, gain and efficiency are specified at 2.3 GHz.