Key facts
- Brand
- Toshiba
- Model
- TLP137
- Industry
- Industrial
- Documents
- 3
- Languages
- EN
- Last added
- 2012-06-01
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Toshiba TLP137 Photocoupler Datasheet
The TLP137 is a miniature GaAs infrared emitting diode coupled to a phototransistor, designed for surface‑mount assembly. It offers high current transfer ratio (CTR) at low input current and includes a base terminal to improve speed and reduce dark current.
The document lists maximum ratings, individual and coupled electrical characteristics, isolation and switching parameters, as well as handling and safety restrictions for reliable use in general electronics applications.
Toshiba TLP137 specifications
| Collector‑emitter voltage (VCEO) | 80 V (min) |
|---|---|
| Isolation voltage | 3750 Vrms (min) |
| Forward current (IF) | 50 mA |
| Power dissipation (PD) | 150 mW |
| Weight | 0.09 g |
All Toshiba TLP137 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum collector‑emitter voltage rating?
The device is rated for a collector‑emitter voltage of at least 80 V.
What isolation voltage does the TLP137 provide?
It provides an isolation voltage of at least 3750 Vrms.
What is the maximum collector‑emitter voltage for the TLP137?
The maximum collector‑emitter voltage is 80 V (minimum rating).
What isolation voltage does the TLP137 provide?
The device is rated for an isolation voltage of 3750 Vrms (minimum).
What is the maximum collector‑emitter voltage for the TLP137?
The maximum collector‑emitter voltage is 80 V (minimum rating).
What isolation voltage rating does the TLP137 have?
The device is rated for an isolation voltage of 3750 Vrms (minimum).