TLP137 is a TOSHIBA photocoupler suitable for surface mount assembly. It consists of a gallium arsenide infrared emitting diode optically coupled to a photo transistor, and provides high CTR at low input current.
The TLP137 is a miniature GaAs infrared photocoupler designed for surface‑mount assembly. It combines an infrared emitting diode with a photo‑transistor to deliver high current transfer ratio (CTR) at low input current, making it suitable for office machines, programmable controllers, and telecommunications equipment.
The document lists absolute maximum ratings, detailed electrical characteristics, isolation and switching parameters, and handling precautions. It also includes pin configuration, recommended operating conditions, and restrictions on product use to ensure reliable integration into electronic designs.
| Collector‑emitter voltage (VCEO) | 80 V (min) |
|---|---|
| Isolation voltage | 3750 Vrms (min) |
| Forward current (IF) | 50 mA |
| Power dissipation (Po) | 150 mW |
| Current transfer ratio (CTR) | 100 % (min) |
The maximum collector‑emitter voltage is 80 V (minimum rating).
The device is rated for an isolation voltage of 3750 Vrms (minimum).
The forward current (IF) rating is 50 mA.
The TLP137 provides a current transfer ratio of at least 100 %.