TLP137 is a small outline coupler suitable for surface mount assembly. It consists of a gallium arsenide infrared emitting diode optically coupled to a photo transistor, providing high CTR at low input current. The base terminal of TLP137 is for speed improvement, dark current reduction, and enable operation.
The TLP137 is a miniature GaAs infrared photocoupler that combines an emitting diode and a photo‑transistor in a surface‑mount package. It offers high current transfer ratio (CTR) at low input current and is intended for general electronics applications such as office equipment, measuring instruments, and industrial robotics.
The document lists absolute maximum ratings, detailed electrical characteristics, isolation and switching parameters, as well as handling precautions and restrictions on product use. Designers can use these data to ensure reliable operation within the specified temperature, voltage, and current limits.
| Collector‑emitter voltage (VCEO) | 80 V (min) |
|---|---|
| Isolation voltage | 3750 Vrms (min) |
| Forward current (IF) | 50 mA |
| Power dissipation (Po) | 150 mW |
| Current transfer ratio (CTR) | 100 % (min) |
The maximum collector‑emitter voltage is 80 V (minimum rating).
The device is rated for an isolation voltage of 3750 Vrms (minimum).
The TLP137 can operate from –55 °C to +100 °C.
The package weight is 0.09 g.