The STP12NK80Z - STB12NK80Z STW12NK80Z is a N-channel 800V - 0.65Ω - 10.5A Zener-protected SuperMESH™ power MOSFET. It features typical RDS(on) = 0.65 Ω, extremely high dv/dt capability, 100% avalanche tested, minimized gate charge, very low intrinsic capacitances and very good manufacturing repeatability. It is suitable for high current, high speed switching and ideal for off-line power supplies.
The handbook provides detailed specifications, ratings and mechanical data for the STP12NK80Z, STB12NK80Z and STW12NK80Z SuperMESH™ power MOSFETs. It includes absolute maximum ratings, thermal characteristics, avalanche protection features and package dimensions for TO‑220, DPAK and TO‑247 variants.
Key sections cover electrical characteristics such as on‑resistance, gate charge and switching times, as well as safe operating area graphs and mechanical drawings for both tube and tape‑and‑reel shipments. The document is intended for designers and engineers selecting high‑voltage MOSFETs for offline power supplies and high‑speed switching applications.
| Drain‑source Voltage (VDS) | 800 V |
|---|---|
| Continuous Drain Current (ID) at 25 °C | 10.5 A |
| Total Power Dissipation (PD) | 190 W |
The devices are rated for a maximum drain‑source voltage of 800 V.
Each MOSFET can conduct up to 10.5 A continuously at 25 °C.
Yes, the MOSFETs include back‑to‑back Zener diodes to enhance ESD capability and protect against voltage transients.