The document describes the features and characteristics of ST's STB12NK80Z, STP12NK80Z, and STW12NK80Z N-channel 800V - 0.65Ω - 10.5A - TO220-D²PAK-TO247 Zener-Protected SuperMESH™ MOSFET. The products have extremely high dv/dt capability, improved ESD capability, 100% avalanche tested, minimized gate charge, very low intrinsic capacitances, and very good manufacturing repeatability.
This document provides technical specifications and electrical characteristics for the STB12NK80Z, STP12NK80Z, and STW12NK80Z N-channel MOSFETs. These devices feature an optimized SuperMESH layout designed for high current, high-speed switching applications such as off-line power supplies and PFC circuits.
| Drain-Source Voltage (VDS) | 800 V |
|---|---|
| Static Drain-Source On Resistance (RDS(on)) | <0.75 Ω |
| Drain Current (continuous) at TC = 25°C | 10.5 A |
| Total Dissipation at TC = 25°C | 190 W |
They are ideal for high current, high speed switching and off-line power supplies, adaptors and PFC.
The operating junction temperature ranges from -55 to 150 °C.