This application note shows the RF wide band characteristics data (Frequency, Pout vs. Pin, Pout vs. Vgg characteristics) at 380 to 470 MHz band.
This application note from Mitsubishi Electric presents measured RF performance data for the silicon power devices RDO1MUS2 and RDO7MUS2B. The data cover frequency response, output power versus input power, output power versus gate voltage, and output power versus supply voltage over the 380 MHz‑470 MHz band.
The measurements were performed with a supply voltage (Vdd) of 7.2 V, a gate bias (Vgg) of 3.5 V, and an input power of 30 mW (14.77 dBm). Results are shown in tables and graphs for each parameter, and an equivalent circuit model is provided on the final pages.
| Frequency range | 380 MHz – 470 MHz |
|---|---|
| Supply voltage (Vdd) | 7.2 V |
| Gate voltage (Vgg) | 3.5 V |
| Input power (Pi) | 30 mW (14.77 dBm) |
The note provides data for the RDO1MUS2 and RDO7MUS2B silicon RF power devices.
All measurements were performed with a supply voltage of 7.2 V.
The devices were evaluated over the 380 MHz to 470 MHz band.
A gate voltage of 3.5 V was used for the evaluation.