This is a technical document for the silicon RF power semiconductors RA45H8994M1 and RA45H7687M1. It includes AM-AM, AM-PM and Vgg2-PM measurement results.
This application note from Mitsubishi Electric provides detailed measurement data for the silicon RF power devices RA45H8994M1 and RA45H7687M1. It includes AM‑AM, AM‑PM and Vgg2‑PM characteristics across several frequencies and outlines the test conditions used.
The document lists gain and phase results for each device at frequencies such as 896 MHz, 920 MHz, 941 MHz, 764 MHz and others, and presents phase‑difference comparisons among individual samples.
| Source/Load Impedance | 50 Ω |
|---|---|
| Supply Voltage Vdd | 12.8 V |
| Gate Voltage Vgg1 | 3.4 V |
| Gate Voltage Vgg2 | 5.0 V |
| Input Power (Pin) | 3 dBm |