The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 763- to 870-MHz range. It features enhancement-mode MOSFET transistors, providing a broadband frequency range, high output power, and high efficiency.
The RA45H7687M1 is a two‑stage silicon RF MOSFET power amplifier module designed for mobile radios that require 45 W output at 12.8 V supply. It operates in the 763‑870 MHz band and features enhancement‑mode MOSFET transistors, a metal cap for improved RF radiation, and low‑power control currents.
The data sheet provides maximum ratings, electrical characteristics, typical performance curves, mechanical dimensions, mounting recommendations, and safety precautions. It also includes RoHS compliance information and guidelines for ESD protection, heat‑sink attachment, and soldering procedures.
| Output Power (typical) | 45 W |
|---|---|
| Frequency Range | 763 – 870 MHz |
| Supply Voltage | 12.8 V |
| Gate Voltage 1 | 3.4 V |
| Gate Voltage 2 (max) | 5 V |
| Total Efficiency (typical) | 33 % |
| Module Size | 67 × 19.4 × 9.9 mm |
| Input Power (minimum) | 100 mW |
| Load VSWR (max) | 3:1 |
| Operating Temperature Range (case) | -30 °C to +100 °C |
Mount the module with M3 screws tightened to 4.0–6.0 kgf·cm and use an athermal compound for low thermal resistance.
Yes, the module is RoHS compliant; compliance is indicated by the letter “G” after the lot marking.
A load VSWR of 3:1 is recommended to avoid oscillation and ensure stable operation.