Datasheet
STP19N06L and STP19N06LFI are N-channel enhancement mode low threshold power MOS transistors with a typical RDS(on) of 0.085 ohms. They are 100% avalanche tested and suitable for high current, high-speed switching, motor control, audio amplifiers, etc.
Datasheet
STP19N06 and STP19N06FI are N-channel enhancement mode power MOS transistors with features such as low on-resistance, high current capability, and 175°C operating temperature. They are suitable for applications such as high current, high speed switching, solenoid and relay drivers, regulators, DC-DC and DC-AC converters, motor control, audio amplifiers, and automotive environment (injection, ABS, air-bag, lamp drivers, etc.).
