STMicroelectronics STP16NK60Z Manuals

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Datasheet 2

Key facts

Model
STP16NK60Z
Industry
Industrial
Documents
2
Languages
EN
Last added
2012-08-07

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STMicroelectronics STP16NK60Z/STB16NK60Z-S/STW16NK60Z N-Channel MOSFET Datasheet

STMicroelectronics STP16NK60Z/STB16NK60Z-S/STW16NK60Z N-Channel MOSFET Datasheet

Datasheet 11 pages · 285 KB · EN

This document provides technical specifications for the STP16NK60Z, STB16NK60Z-S, and STW16NK60Z N-Channel MOSFETs. These devices belong to the SuperMESH™ series, which utilizes an optimized strip-based PowerMESH™ layout to achieve low on-resistance and high dv/dt capability. The MOSFETs are designed for high current, high speed switching applications, particularly in off-line power supplies.

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STMicroelectronics STP16NK60Z specifications

Drain‑source Voltage (Vds)600 V
Continuous Drain Current (Id) @ 25 °C14 A
Total Power Dissipation190 W
Typical On‑Resistance (Rds(on))0.38 Ω
Avalanche Energy (Eas)360 mJ
Thermal Resistance Junction‑Ambient (RθJA) TO‑22062.5 °C/W

Source: STMicroelectronics STP16NK60Z / STB16NK60Z‑S / STW16NK60Z Datasheet

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Questions answered in these manuals

Do these devices include built-in protection?

Yes, they feature built-in back-to-back Zener diodes to protect against gate-to-source voltage transients.

From: STMicroelectronics STP16NK60Z/STB16NK60Z-S/STW16NK60Z N-Channel MOSFET Datasheet

What is the maximum continuous drain current for these MOSFETs at 25°C?

The maximum continuous drain current is 14 A when the case temperature is 25°C.

From: STMicroelectronics STP16NK60Z/STB16NK60Z-S/STW16NK60Z N-Channel MOSFET Datasheet

What is the maximum continuous drain current for these MOSFETs?

The maximum continuous drain current is 14 A at a case temperature of 25 °C.

From: STMicroelectronics STP16NK60Z / STB16NK60Z‑S / STW16NK60Z Datasheet

What is the typical on‑resistance of the MOSFETs?

The typical on‑resistance (Rds(on)) is 0.38 Ω.

From: STMicroelectronics STP16NK60Z / STB16NK60Z‑S / STW16NK60Z Datasheet