STP19N06 and STP19N06FI are N-channel enhancement mode power MOS transistors with features such as low on-resistance, high current capability, and 175°C operating temperature. They are suitable for applications such as high current, high speed switching, solenoid and relay drivers, regulators, DC-DC and DC-AC converters, motor control, audio amplifiers, and automotive environment (injection, ABS, air-bag, lamp drivers, etc.).
This document provides comprehensive technical specifications for the STP19N06 and STP19N06FI N-channel enhancement mode power MOS transistors. It covers absolute maximum ratings, electrical characteristics including switching parameters, and avalanche ruggedness data suitable for automotive and industrial applications.
| Drain-source Voltage | 60 V |
|---|---|
| Drain Current (continuous) at Tc = 25°C | 19 A |
| Total Dissipation at Tc = 25°C | 80 W |
| Operating Junction Temperature | 175°C |
| Package Type | TO-220 |
The device is intended for high current, high speed switching, solenoid and relay drivers, regulators, DC-DC & DC-AC converters, motor control, audio amplifiers, and automotive environments.
Yes, the device features avalanche rugged technology and is 100% avalanche tested with repetitive avalanche data available at 100°C.