STP19N06L and STP19N06LFI are N-channel enhancement mode low threshold power MOS transistors with a typical RDS(on) of 0.085 ohms. They are 100% avalanche tested and suitable for high current, high-speed switching, motor control, audio amplifiers, etc.
This document is a technical datasheet for the STP19N06L and STP19N06LFI N-Channel Enhancement Mode Low Threshold Power MOS Transistors. These devices feature avalanche rugged technology, are 100% avalanche tested, and offer logic-level compatible inputs suitable for automotive environments such as injection systems, ABS, air-bag, and lamp drivers.
| Drain-source Voltage | 60 V |
|---|---|
| Total Dissipation at Tc = 25°C | 80 W |
| Operating Junction Temperature | 175 °C |
The typical drain-source on resistance (RDS(on)) is 0.085 Ω.
Yes, the devices are 100% avalanche tested and feature avalanche rugged technology.
The maximum operating junction temperature (Tj) is 175 °C.