Key facts
- Brand
- STMicroelectronics
- Model
- STP19N06L
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-08-07
Start here
SGS-THOMSON Microelectronics STP19N06L/STP19N06LFI N-Channel Enhancement Mode Low Threshold Power MOS Transistor Datashe
This document is a technical datasheet for the STP19N06L and STP19N06LFI N-Channel Enhancement Mode Low Threshold Power MOS Transistors. These devices feature avalanche rugged technology, are 100% avalanche tested, and offer logic-level compatible inputs suitable for automotive environments such as injection systems, ABS, air-bag, and lamp drivers.
Read onlineSTMicroelectronics STP19N06L specifications
| Drain-source Voltage | 60 V |
|---|---|
| Total Dissipation at Tc = 25°C | 80 W |
| Operating Junction Temperature | 175 °C |
All STMicroelectronics STP19N06L documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the typical RDS(on) for this transistor?
The typical drain-source on resistance (RDS(on)) is 0.085 Ω.
Is this device avalanche tested?
Yes, the devices are 100% avalanche tested and feature avalanche rugged technology.
What are the applications for the STP19N06?
The device is intended for high current, high speed switching, solenoid and relay drivers, regulators, DC-DC & DC-AC converters, motor control, audio amplifiers, and automotive environments.
Is the STP19N06 avalanche rugged?
Yes, the device features avalanche rugged technology and is 100% avalanche tested with repetitive avalanche data available at 100°C.