User Manual
K4S283233F is a synchronous high data rate Dynamic RAM with features such as 3.0V & 3.3V power supply, LVCMOS compatible with multiplexed address, four banks operation, and MRS cycle with address key programs, etc.
Datasheet
The K4S283233F is a 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technol- ogy. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high per- formance memory system applications.
