Key facts
- Brand
- Samsung
- Model
- K4S280432D
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-01
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Samsung K4S280432D CMOS SDRAM Datasheet
The K4S280432D is a 128‑Mbit synchronous DRAM organized as 8M × 4 bits with four banks and LVTTL compatible I/O. It is offered in a 54‑pin TSOP package and supports up to 133 MHz operation (CL = 2). The document details the device's features, functional block diagram, pin assignments, absolute maximum ratings, and both DC and AC operating conditions.
The datasheet also includes timing parameters, recommended supply voltages, power dissipation limits, and command truth tables. Revision history shows updates to IDD1, IDD4, and AC parameter notes, with Samsung recommendations for tRDL and tDAL timings.
Samsung K4S280432D specifications
| Capacity | 128 Mbit |
|---|---|
| Organization | 8M × 4 bit × 4 banks |
| Package | 54‑pin TSOP |
| Maximum Frequency | 133 MHz (CL = 2) |
| Supply Voltage (VDD) | 3.0 V min / 3.3 V typ / 3.6 V max |
| Operating Temperature | -55 °C to +150 °C |
| Power Dissipation | 1 W |
| Short‑circuit Current | 50 mA |
All Samsung K4S280432D documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What supply voltage range is recommended for the K4S280432D?
The recommended supply voltage is 3.0 V minimum, 3.3 V typical, and 3.6 V maximum.
What are the absolute maximum voltage ratings for any pin?
Any pin may be subjected to a voltage from –10 V to +46 V relative to Vss.
What supply voltage is recommended for the K4S280432D?
The recommended supply voltage is 3.3 V typical, with a range from 3.0 V minimum to 3.6 V maximum.
What is the maximum operating frequency of the device?
The device can operate up to 133 MHz for both CAS latency 2 and 3 configurations.