The K4S283233F is a 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technol- ogy. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high per- formance memory system applications.
The K4S283233F is a 1M × 32‑bit × 4‑bank Mobile SDRAM offered in a 90‑ball FBGA package. It supports 3.0 V and 3.3 V power supplies, multiple CAS latencies (1, 2, 3) and burst lengths (1, 2, 4, 8, full page). The device includes special functions such as Partial Array Self‑Refresh (PASR) and internal Temperature‑Compensated Self‑Refresh (TCSR).
The data sheet lists absolute maximum ratings, recommended DC and AC operating conditions, timing parameters, and the power‑up sequence. Temperature ranges are provided for commercial (‑25 °C to 70 °C) and extended (‑25 °C to 85 °C) operation, with a 64 ms refresh period and various current specifications for different modes.
| Organization | 1M × 32‑bit × 4 banks |
|---|---|
| Supply Voltage | 3.0 V & 3.3 V |
| Maximum Frequency | 166 MHz (CL=3) |
| CAS Latency Options | 1, 2, 3 |
| Burst Length Options | 1, 2, 4, 8, Full page |
| Package Type | 90‑ball FBGA, 0.8 mm pitch |
| Temperature Range (Commercial) | -25 °C to 70 °C |
| Temperature Range (Extended) | -25 °C to 85 °C |
| Refresh Period | 64 ms (4K cycle) |
The device supports 3.0 V and 3.3 V power supplies.
It is offered for commercial operation from –25 °C to 70 °C and extended operation from –25 °C to 85 °C.
The refresh period is 64 ms (4K cycle).
It uses a 90‑ball FBGA package with a 0.8 mm ball pitch.