Key facts
- Brand
- Samsung
- Model
- K4S280432A
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-01
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Samsung K4S280432A CMOS SDRAM Datasheet
The K4S280432A is a 128‑Mbit CMOS synchronous DRAM organized as 8M × 4‑bit × 4 banks and compatible with LVTTL logic. It operates from a 3.3 V supply and supports burst lengths of 1, 2, 4, 8 and CAS latencies of 2 or 3.
The document lists absolute maximum ratings, recommended DC and AC operating conditions, pin‑out details, timing parameters, IBIS I/O models, and a simplified truth table for command encoding. Package options include TC/L75 (133 MHz), TC/L80 (125 MHz) and TC/L10 (66 MHz).
Samsung K4S280432A specifications
| Capacity | 128 Mbit |
|---|---|
| Organization | 8M × 4‑bit × 4 banks |
| Supply voltage (typical) | 3.3 V |
| CAS latency options | 2 or 3 |
| Burst length options | 1, 2, 4, 8 |
All Samsung K4S280432A documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the supply voltage range for the K4S280432A?
The device operates with a supply voltage from 3.0 V minimum to 3.6 V maximum (typical 3.3 V).
How many banks does the K4S280432A have?
It contains four banks.
What is the memory capacity of the K4S280432A?
The device provides 128 Mbit of memory, organized as 8 M × 4 bit × 4 banks.
What supply voltage should be used with the K4S280432A?
The recommended supply voltage is 3.3 V, with a permissible range from 3.0 V to 3.6 V.