Key facts
- Brand
- Samsung
- Model
- K4S280832A
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-01
Start here
Samsung K4S280832A CMOS SDRAM Datasheet
The Samsung K4S280832A is a 128‑Mbit CMOS SDRAM organized as 4M × 8‑bit × 4 banks. It operates with a 3.3 V LVTTL interface and supports CAS latencies of 2 and 3, burst lengths from 1 to full page, and programmable burst types. The device is offered in a 54‑pin TSOP package.
The datasheet lists absolute maximum ratings, recommended DC operating conditions, AC characteristics, IBIS specifications, and a simplified truth table for command timing. Detailed pin‑out diagrams and electrical parameters such as supply voltage range, power dissipation, and temperature limits are included to aid designers in integrating the part into high‑performance memory systems.
Samsung K4S280832A specifications
| Memory capacity | 128 Mbit |
|---|---|
| Organization | 4M × 8 bit × 4 banks |
| Supply voltage (VDD) | 3.0 V – 3.6 V (typical 3.3 V) |
| Maximum operating frequency | 133 MHz (CL = 3) |
| CAS latency | 2 or 3 |
| Package | 54‑pin TSOP |
| Power dissipation | 1 W |
| Storage temperature range | -55 °C – +150 °C |
| Refresh period | 64 ms (4K cycles) |
All Samsung K4S280832A documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What supply voltage range does the K4S280832A require?
The device operates with a supply voltage between 3.0 V and 3.6 V, with a typical value of 3.3 V.
What are the supported CAS latencies?
The K4S280832A supports CAS latency values of 2 and 3.
What is the recommended supply voltage for the K4S280832A?
The typical supply voltage is 3.3 V, with an allowed range from 3.0 V to 3.6 V.
What is the maximum operating frequency for the K4S280832A‑TC/L75 package?
The K4S280832A‑TC/L75 can operate up to 133 MHz (CAS latency = 3).