Key facts
- Brand
- Samsung
- Model
- K4S511633F-Y
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-01
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Samsung K4S511633F-Y(P)C/L/F Mobile SDRAM Datasheet
The Samsung K4S511633F-Y(P)C/L/F is an 8M × 16‑bit mobile SDRAM organized in four banks, supporting 3.0 V and 3.3 V power supplies, LVCMOS‑compatible multiplexed address, and a range of CAS latencies and burst lengths. It includes features such as Partial Array Self‑Refresh (PASR) and internal Temperature‑Compensated Self‑Refresh (TCSR).
The document provides full electrical characteristics, package dimensions, pin configuration, absolute maximum ratings, and recommended operating conditions, as well as power‑up sequencing and burst operation examples for designers integrating the device into high‑performance memory systems.
Samsung K4S511633F-Y specifications
| Memory capacity | 8M × 16 bit × 4 banks |
|---|---|
| Supply voltage (Vbb) | 2.7 V – 3.6 V |
| Maximum operating frequency | 133 MHz (CL3) / 111 MHz (CL2) |
| Package type | 54‑ball FBGA |
| Operating temperature range | -25 °C – 70 °C |
| Refresh period | 64 ms (8K cycles) |
| Storage temperature range | -55 °C – +150 °C |
| Power dissipation (Pp) | 1.0 W |
All Samsung K4S511633F-Y documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What supply voltage does the K4S511633F-Y(P)C/L/F require?
The device operates with a supply voltage (Vbb) between 2.7 V and 3.6 V.
What is the temperature range for commercial operation?
It is rated for commercial temperature operation from –25 °C to 70 °C.
What is the operating voltage range for the K4S511633F-Y(P)C/L/F SDRAM?
The device operates from 3.0 V to 3.3 V, with a recommended supply voltage of 2.7 V to 3.6 V.
What is the refresh period of this Mobile SDRAM?
The SDRAM uses a 64 ms refresh period (8K cycles).