Key facts
- Brand
- Samsung
- Model
- K4S280432C
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-01
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Samsung K4S280432C CMOS SDRAM Datasheet
This document describes the Samsung K4S280432C 128 Mbit CMOS SDRAM, a synchronous DRAM organized as 8M × 4 bits with four banks. It includes features, ordering information, functional block diagrams, pin configuration, and detailed electrical and timing specifications.
Key sections cover absolute maximum ratings, recommended DC and AC operating conditions, pin functions, burst operation, CAS latency options, and a simplified truth table for command encoding. The datasheet is intended for designers and engineers integrating the part into high‑performance memory systems.
Samsung K4S280432C specifications
| Capacity | 128 Mbit |
|---|---|
| Organization | 8M × 4 bits × 4 banks |
| Supply voltage (VDD) | 3.0 V – 3.6 V |
| Maximum operating frequency | 133 MHz (TC/L75 version) |
| CAS latency | 2 or 3 |
| Burst length | 1, 2, 4, 8 |
| Refresh period | 64 ms |
| Operating temperature range | -55 °C to +150 °C |
All Samsung K4S280432C documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the supply voltage range for the K4S280432C?
The device operates with a supply voltage between 3.0 V and 3.6 V.
What is the maximum clock frequency supported?
The TC/L75 version can run up to 133 MHz with CAS latency 3.