Key facts
- Brand
- Samsung
- Model
- K4S511633C-YL
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-01
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Samsung K4S511633C-YL/N/P CMOS SDRAM Datasheet
Datasheet 8 pages · 79 KB · EN
The K4S511633C-YL/N/P is a mobile CMOS SDRAM device from Samsung, organized as 8M × 16 bits with four banks. It is designed for high‑performance memory systems in mobile and embedded applications.
The document details electrical specifications, package dimensions, timing parameters, and command tables, enabling designers to integrate the part into their circuits with proper voltage, frequency, and timing settings.
Samsung K4S511633C-YL specifications
| Memory organization | 8M × 16 bit × 4 banks |
|---|---|
| Supply voltage (VDD/VDDQ) | 2.7 V – 3.6 V |
| Maximum operating frequency | 100 MHz (CL=2) |
| Power dissipation (absolute max) | 1 W |
| Package type | 54‑ball CSP |
| CAS latency options | 1, 2, 3 |
All Samsung K4S511633C-YL documents by type
Datasheet 2
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the operating voltage range for the K4S511633C-YL/N/P?
The device operates with a supply voltage between 2.7 V and 3.6 V.
What is the maximum operating frequency of this SDRAM?
It can run up to 100 MHz when configured with CL = 2.
What is the recommended supply voltage range for the K4S511633C SDRAM?
The recommended supply voltage is between 2.7 V and 3.6 V.
What is the maximum clock frequency the device can operate at?
The device can operate up to 100 MHz when programmed with CL=2.