Key facts
- Brand
- Samsung
- Model
- K7N163601A
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-08
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Samsung K7N163601A 512Kx36 Pipelined SRAM Datasheet
Datasheet 24 pages · 284 KB · EN
This document is a technical datasheet for the Samsung K7N163601A and K7N161801A, which are 512Kx36-bit and 1Mx18-bit pipelined NtRAM (No Turnaround Random Access Memory) devices. These synchronous static SRAMs utilize high-performance CMOS technology and feature byte-writable functions, self-timed write cycles, and support for both commercial and industrial temperature ranges.
Read onlineSamsung K7N163601A specifications
| Power Supply Voltage (VDD) | 3.3V +/- 0.165V |
|---|---|
| I/O Voltage (3.3V I/O) | 3.3V +/- 0.165V |
| I/O Voltage (2.5V I/O) | 2.5V +/- 0.4V/-0.125V |
| Package Types | 100-TQFP and 165FBGA |
| Operating Temperature Ranges | Commercial and Industrial |
All Samsung K7N163601A documents by type
User Manual 1
Day-to-day operation, settings and troubleshooting. Start here if the product is already set up.
Datasheet 1
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the full name of the memory technology used?
The device uses NtRAM, which stands for No Turnaround Random Access Memory.
How does the write cycle operate?
Write cycles are internally self-timed and initiated by the rising edge of the clock input.