Key facts
- Brand
- Samsung
- Model
- K4S511632M
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-01
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Samsung K4S511632M CMOS SDRAM Datasheet
The K4S511632M is a 912 Mbit CMOS SDRAM organized as 8 M × 16 bit × 4 banks. It operates with a 3.3 V LVTTL interface and supports synchronous operation up to 133 MHz. The document lists features such as selectable CAS latency, burst length options, and auto/self‑refresh capabilities.
Detailed sections cover pin configuration for the 54‑pin TSOP package, absolute maximum ratings, DC and AC operating conditions, timing parameters, and a simplified truth table for command encoding. Revision history and ordering information for different package variants are also included.
Samsung K4S511632M specifications
| Capacity | 912 Mbit |
|---|---|
| Organization | 8 M × 16 bit × 4 banks |
| Supply Voltage | 3.0 V – 3.6 V |
| Maximum Frequency | 133 MHz (TC/TL75 version) |
| CAS Latency | 2 or 3 |
| Burst Length Options | 1, 2, 4, 8, Full page |
| Package | 54‑pin TSOP (II) |
All Samsung K4S511632M documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the supply voltage range for the K4S511632M SDRAM?
The device operates with a supply voltage between 3.0 V and 3.6 V.
What is the maximum operating frequency of the K4S511632M?
The TC/TL75 version can run up to 133 MHz.
What is the supply voltage range for the K4S511632M?
The device operates with a supply voltage between 3.0 V and 3.6 V.
What is the maximum clock frequency supported?
The K4S511632M‑TC/TL75 version can run up to 133 MHz with CAS latency 3.