K4S283233F is a synchronous high data rate Dynamic RAM with features such as 3.0V & 3.3V power supply, LVCMOS compatible with multiplexed address, four banks operation, and MRS cycle with address key programs, etc.
The K4S283233F mobile SDRAM provides 1 M × 32 bit storage organized in four banks and is supplied in a 90‑ball FBGA package (0.8 mm pitch). It supports both commercial (‑25 °C ~ 70 °C) and extended (‑25 °C ~ 85 °C) temperature ranges, with power‑supply options of 3.0 V and 3.3 V. Features include selectable CAS latencies (1, 2, 3), burst lengths (1, 2, 4, 8, full page), partial array self‑refresh and temperature‑compensated self‑refresh.
Electrical specifications cover absolute maximum ratings, recommended DC operating conditions (Vbb 2.7‑3.6 V, Vih 2.2‑3.0 V, Vil –0.3‑0.5 V), AC characteristics, and timing parameters for various latency settings. The document also details the power‑up sequence, burst operation modes, and pin configuration.
| Capacity and organization | 1M × 32 bit × 4 banks |
|---|---|
| Package | 90‑ball FBGA, 0.8 mm pitch |
| Supply voltage | 3.0 V & 3.3 V |
| Operating temperature (commercial) | -25 °C ~ 70 °C |
| Operating temperature (extended) | -25 °C ~ 85 °C |
| Refresh period | 64 ms (4K cycle) |
| Maximum frequency | 166 MHz (CL=3) |
| CAS latency options | 1, 2, 3 |
| Burst length options | 1, 2, 4, 8, full page |
The device operates with a supply voltage (Vbb) between 2.7 V and 3.6 V.
It supports commercial temperature operation from –25 °C to 70 °C and extended temperature operation from –25 °C to 85 °C.
The SDRAM uses a 64 ms refresh period (4K cycle).
It is supplied in a 90‑ball FBGA package with a 0.8 mm ball pitch.