This document is about 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL. It describes the features and characteristics of the product in detail.
The K4S280432D is a 128‑Mbit synchronous DRAM organized as 8M × 4 bits with four banks and LVTTL compatible I/O. It is offered in a 54‑pin TSOP package and supports up to 133 MHz operation (CL = 2). The document details the device's features, functional block diagram, pin assignments, absolute maximum ratings, and both DC and AC operating conditions.
The datasheet also includes timing parameters, recommended supply voltages, power dissipation limits, and command truth tables. Revision history shows updates to IDD1, IDD4, and AC parameter notes, with Samsung recommendations for tRDL and tDAL timings.
| Capacity | 128 Mbit |
|---|---|
| Organization | 8M × 4 bit × 4 banks |
| Package | 54‑pin TSOP |
| Maximum Frequency | 133 MHz (CL = 2) |
| Supply Voltage (VDD) | 3.0 V min / 3.3 V typ / 3.6 V max |
| Operating Temperature | -55 °C to +150 °C |
| Power Dissipation | 1 W |
| Short‑circuit Current | 50 mA |
The recommended supply voltage is 3.0 V minimum, 3.3 V typical, and 3.6 V maximum.
Any pin may be subjected to a voltage from –10 V to +46 V relative to Vss.
The device can operate up to 133 MHz when CL = 2 (or 133 MHz CL = 3 for certain packages).
Samsung recommends tRDL = 2 CLK and tDAL = 2 CLK + tRP.