The document describes the features and characteristics of CMOS SDRAM K4S280432D, including its storage capacity, structure, operating frequency, and power supply.
The Samsung K4S280432D is a 128 Mbit synchronous DRAM organized as 8 M × 4 bit × 4 banks, compatible with LVTTL interfaces. The datasheet provides full electrical characteristics, pin configurations, timing parameters, and absolute maximum ratings for design engineers.
Key sections include revision history, functional block diagram, pin description, DC and AC operating conditions, and a simplified truth table for command encoding. The document also lists recommended supply voltages, maximum operating frequencies, and clamp current specifications.
| Memory capacity | 128 Mbit |
|---|---|
| Organization | 8M × 4 bit × 4 banks |
| Supply voltage (VDD) | 3.0 V – 3.6 V |
| Maximum operating frequency | 133 MHz (CL = 2 or 3) |
| Storage temperature range | -55 °C to +150 °C |
| Power dissipation | 1 W |
The recommended supply voltage is 3.3 V typical, with a range from 3.0 V minimum to 3.6 V maximum.
The device can operate up to 133 MHz for both CAS latency 2 and 3 configurations.
The storage temperature range is from –55 °C to +150 °C.
It has four banks, each organized as 8 M × 4 bit.