K4S280432A is a 128Mbit SDRAM fabricated with SAMSUNG's high performance CMOS technology. It features synchronous design and programmable characteristics, making it suitable for high bandwidth, high performance memory system applications.
The K4S280432A is a 128‑Mbit CMOS synchronous DRAM organized as 8M × 4‑bit × 4 banks and compatible with LVTTL logic. It operates from a 3.3 V supply and supports burst lengths of 1, 2, 4, 8 and CAS latencies of 2 or 3.
The document lists absolute maximum ratings, recommended DC and AC operating conditions, pin‑out details, timing parameters, IBIS I/O models, and a simplified truth table for command encoding. Package options include TC/L75 (133 MHz), TC/L80 (125 MHz) and TC/L10 (66 MHz).
| Capacity | 128 Mbit |
|---|---|
| Organization | 8M × 4‑bit × 4 banks |
| Supply voltage (typical) | 3.3 V |
| CAS latency options | 2 or 3 |
| Burst length options | 1, 2, 4, 8 |
The device operates with a supply voltage from 3.0 V minimum to 3.6 V maximum (typical 3.3 V).
It contains four banks.
Both CAS latency 2 and CAS latency 3 are supported.