The K4S280432A is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits, fabricated with SAMSUNG′s high performance CMOS technol- ogy. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance mem- ory system applications.
The K4S280432A is a 128‑Mbit CMOS synchronous DRAM from Samsung, organized as 8M × 4‑bit × 4 banks and compatible with LVTTL interfaces. It is intended for high‑performance memory applications requiring precise cycle control and flexible burst operations.
The document details pin configurations, absolute maximum ratings, DC and AC operating conditions, IBIS specifications, and a simplified truth table for command encoding, enabling designers to integrate the device into a variety of systems.
| Memory capacity | 128 Mbit |
|---|---|
| Organization | 8M × 4 bit × 4 banks |
| Supply voltage (Vop, Vopa) | 3.0 V – 3.6 V (typ. 3.3 V) |
| Operating temperature range | -55 °C to +150 °C |
| Power dissipation | 1 W |
The device provides 128 Mbit of memory, organized as 8 M × 4 bit × 4 banks.
The recommended supply voltage is 3.3 V, with a permissible range from 3.0 V to 3.6 V.
The device can withstand storage temperatures from –55 °C to +150 °C.