VT6T1 is a PNP silicon epitaxial planar transistor produced by ROHM. It features a very small package containing two transistors. It is mainly used for switching and LED driving.
The VT6T1 is a PNP silicon epitaxial planar transistor offered in a very small dual‑transistor package. It is intended for switching and LED‑driver applications.
The sheet lists absolute maximum ratings, electrical characteristics, and typical application curves, along with packaging dimensions and ordering information. It also includes legal notices and usage restrictions.
| Collector‑base voltage (Vcbo) | -20 V |
|---|---|
| Collector‑emitter voltage (Vceo) | -20 V |
| Emitter‑base voltage (Vebo) | 5 V |
| Maximum collector current (Ic) | 200 mA |
| Junction temperature (Tj) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
| Package type | Very small dual‑transistor package |
The maximum collector current is 200 mA.
The device can be stored from –55 °C up to +150 °C.
No, the VT6T1 is not designed to be radiation tolerant.
It uses a very small package that contains two transistors.