VT6T11 is a NPN silicon epitaxial planar transistor produced by ROHM. It has a very small package and is suitable for current mirror circuits.
The VT6T11 is a dual PNP silicon epitaxial planar transistor offered in a very small package. It is intended for current‑mirror circuits and other applications that require matched transistors.
The datasheet lists absolute maximum ratings, such as a collector‑emitter voltage of –20 V and a collector current of 200 mA, as well as typical electrical characteristics, gain ranges, and packaging information (code T2R, 8000 pieces per reel). It also includes a notice about usage limits, stating the device is not radiation‑tolerant and should not be used in safety‑critical equipment.
| Emitter‑base voltage (VEB0) | -5 V |
|---|---|
| Collector current (Ic) | 200 mA |
| Power dissipation (P) | 150 mW |
| Junction temperature (Tj) | 150 °C |
| Storage temperature (Tstg) | -55 to +150 °C |
| DC current gain (hFE) range | 120 – 560 |
The maximum collector current is 200 mA.
It is suitable for current‑mirror circuits.
No, the product is not designed to be radiation tolerant.