Key facts
- Brand
- NEC
- Model
- NE85001
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-06
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NEC NE85001 Series GaAs MES FET Datasheet
Datasheet 7 pages · 33 KB · EN
This document is a preliminary data sheet for the NEC NE85001 Series, which includes the NE8500199 (package) and NE8500100 (chip). The device is an N-channel GaAs MESFET designed for commercial amplifier and oscillator applications within the 2 GHz to 10 GHz frequency range. It features a Ti-Al gate and silicon dioxide glassivation, with a Plated Heat Sink (PHS) to reduce thermal resistance.
Read onlineNEC NE85001 specifications
| Frequency Range | 2 GHz to 10 GHz |
|---|---|
| Total Power Dissipation | 6.0 W |
| Drain Current (Id) | 1.12 A max |
All NEC NE85001 documents by type
Datasheet 2
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the recommended operating channel temperature?
The recommended channel temperature range is up to 130 °C.
Is epoxy die attach recommended for this chip?
No, the document states that epoxy die attach is not recommended.
What is the recommended operating drain-to-source voltage?
The recommended operating range for Drain to Source Voltage (Vds) is 9 V to 10 V.
What frequency range does the NE85001 Series cover?
The device covers a frequency range from 2 GHz to 10 GHz.