NEC NE85001 Series GaAs FET Datasheet

NE8500199 is a 1W C-band power GaAs FET produced by NEC with high reliability and performance

Brand: NEC
Category: Other Electronics
Document type: Datasheet
Language: English
Pages: 6
File format: PDF
File size: 28 KB
Published: 07 June, 2012
Updated: 30 September, 2023
Model: NE85001
MD5 checksum: 1B06BC79124F7548C9396499C01CD989
PDF: NEC NE85001 Series GaAs FET Datasheet PDF

About this manual

This document provides a preliminary data sheet for the NEC NE85001 Series, which includes the NE8500100 (chip) and NE8500199 (package). The device is an N-Channel GaAs MESFET designed for commercial amplifier and oscillator applications within the 2 GHz to 10 GHz frequency range. It features a Ti-Al gate, silicon dioxide glassivation, and a Plated Heat Sink (PHS) to reduce thermal resistance.

What's inside

Description
Physical Dimensions
Absolute Maximum Ratings
Electrical Characteristics
Performance Specifications
Typical Characteristics
S-Parameter
Chip Handling

Specifications

Frequency Range	2 GHz to 10 GHz
Total Power Dissipation	6.0 W
Drain Current (Id)	1.12 A max

Frequently asked questions

What is the recommended operating drain-to-source voltage?

The recommended operating range for Drain to Source Voltage (Vds) is 9 V to 10 V.

What frequency range does the NE85001 Series cover?

The device covers a frequency range from 2 GHz to 10 GHz.

What is the maximum total power dissipation for this FET?

The maximum total power dissipation is 6.0 W.

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