Key facts
- Brand
- NEC
- Model
- 2SK3296
- Category
- Power Amplifier
- Industry
- Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2026-09-28
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NEC 2SK3296 N-Channel Power MOS FET Datasheet
Datasheet 8 pages · 422 KB · EN
The NEC 2SK3296 is an N‑Channel power MOSFET designed for low‑voltage, high‑current applications such as DC‑DC converters with synchronous rectifiers. It offers a low on‑state resistance, low gate charge and built‑in gate protection diode.
The document provides absolute maximum ratings, electrical characteristics, typical performance curves, and mechanical dimensions for several package types (TO‑220AB, TO‑262, TO‑263). Ordering information and legal notices are also included.
NEC 2SK3296 specifications
| Drain‑to‑Source Voltage (VDS) Max | 20 V |
|---|---|
| Gate‑to‑Source Voltage (VGS) Max | ±20 V |
| Drain Current (DC) Max | ±35 A |
| Available Packages | TO‑220AB, TO‑262, TO‑263 (ZK, ZJ) |
All NEC 2SK3296 documents by type
Datasheet 1
Ratings, dimensions and ordering codes, for selection and design work.
Other documents 1
Questions answered in these manuals
What is the maximum drain current rating?
The datasheet lists a maximum DC drain current of ±35 A.
Which package types are available for the 2SK3296?
Available packages include TO‑220AB, TO‑262, and TO‑263 (ZK and ZJ).