The NE85001 series is a 1 W C-band power GaAs MES FET N-CHANNEL GaAs MES FET. It covers a frequency range of 2 GHz to 10 GHz and is suitable for commercial amplifier, oscillator applications, and more. The device features a Ti-Al gate and silicon dioxide glassivation, providing high power output and reliability.
This document is a preliminary data sheet for the NEC NE85001 Series, which includes the NE8500199 (package) and NE8500100 (chip). The device is an N-channel GaAs MESFET designed for commercial amplifier and oscillator applications within the 2 GHz to 10 GHz frequency range. It features a Ti-Al gate and silicon dioxide glassivation, with a Plated Heat Sink (PHS) to reduce thermal resistance.
| Frequency Range | 2 GHz to 10 GHz |
|---|---|
| Drain to Source Voltage Max | 15 V |
The recommended channel temperature range is up to 130 °C.
No, the document states that epoxy die attach is not recommended.