RD01MUS1 is a MOS FET type transistor specially designed for VHF/UHF RF amplifiers applications.
The RDO1MUS1 is a silicon RF power MOSFET designed for VHF/UHF RF amplifier applications. It operates at 520 MHz with a typical output power of up to 1 W and offers high gain and efficiency. The document provides detailed electrical characteristics, absolute maximum ratings, and typical performance curves.
Safety and handling instructions are included, emphasizing heat management, ESD protection, and compliance with RoHS. Users are advised to follow the precautionary guidelines and consult formal specification sheets for detailed design information.
| Drain‑to‑source voltage (V_DSS) | 30 V |
|---|---|
| Gate‑to‑source voltage (V_GS) | ±10 V |
| Channel dissipation (P_ch) | 3.6 W |
| Drain current (I_D) | 600 mA |
| Storage temperature range | -40 °C to +125 °C |
| Thermal resistance (Rθ_J‑C) | 345 °C/W |
The maximum drain current is specified as 600 mA.