FDD5N50NZF is a N-channel enhancement mode power field effect transistor produced by Fairchild, with low RDS(on), low gate charge, low Crss, fast switching, 100% avalanche tested, improved dv/dt capability, ESD improved capability and RoHS compliance.
The document describes the Fairchild FDD5N50NZF, an N-channel enhancement mode power field effect transistor manufactured using proprietary DMOS technology. It is designed for high-efficiency switching mode power supplies and active power factor correction applications.
Key features include a low on-state resistance of 1.47 Ω (typical), low gate charge, fast switching capabilities, and robust avalanche energy handling. The device operates within a temperature range of -55°C to +150°C. This manual is written in Chinese.
| Drain to Source Voltage (VDSS) | 500 V |
|---|---|
| Continuous Drain Current (TC = 25°C) | 3.7 A |
| Operating and Storage Temperature Range | -55 to +150°C |
The typical RDS(on) is 1.47 Ω when VGS = 10V and ID = 1.85A.
Yes, the document lists it as RoHS Compliant.