The FDD5N50NZ is a N-channel MOSFET with a maximum voltage of 500V and a maximum current of 4A. It has a fast switching speed and has passed a 100% avalanche test.
This document is a technical datasheet for the Fairchild Semiconductor FDD5N50NZ, an N-Channel MOSFET designed using proprietary planar stripe DMOS technology. The device features low gate charge and improved dv/dt capability, making it suitable for efficient switching mode power supplies and active power factor correction applications.
The document provides comprehensive electrical characteristics, including maximum ratings such as a 500V drain-to-source voltage and 4A continuous current. It also details thermal resistance values, capacitance parameters, and typical performance curves regarding on-resistance, breakdown voltage, and switching times under various temperature conditions.
| Drain to Source Voltage (V_DSS) | 500 V |
|---|---|
| Gate to Source Voltage (V_GSS) | 425 V |
| Continuous Drain Current (I_D) | 4 A |
| Power Dissipation (T_C = 25°C) | 62 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Thermal Resistance (Junction to Case) | 2.0 °C/W |
| Package Type | D-PAK |
The maximum continuous drain current (I_D) is 4 A when the case temperature is 25°C.
Yes, the FDD5N50NZ is listed as RoHS Compliant in the features description.
The total gate charge (Q_g) is typically 8 nC when tested at a drain-source voltage of 10V.