Key facts
- Brand
- Toshiba
- Model
- TC7WG00FU
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-01
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THSHIBA TC7WG00FU TC7WG00FK Manual(1)
Datasheet 7 pages · 207 KB · EN
The TC7WGOOFU/FK is a CMOS dual 2‑input NAND gate designed for general electronics applications. It offers high‑level output current of 8 mA at a 3 V supply and operates over a wide voltage range of 0.9 V to 3.6 V, with typical propagation delay of 2.5 ns at 3.3 V.
The device is supplied in two SSOP‑8 packages (0.65 mm and 0.50 mm lead pitch) with typical weights of 0.02 g and 0.01 g respectively. The datasheet includes absolute maximum ratings, electrical characteristics, AC characteristics, and a list of usage restrictions for safety‑critical applications.
Toshiba TC7WG00FU specifications
| High‑level output current | +8 mA (min) at Vcc = 3 V |
|---|---|
| Operating voltage range | 0.9 V ~ 3.6 V |
| Propagation delay (typ.) | 2.5 ns at Vcc = 3.3 V, 15 pF |
| Package type | SSOP‑8 0.65 mm pitch (typical weight 0.02 g) |
| Package type | SSOP‑8 0.50 mm pitch (typical weight 0.01 g) |
All Toshiba TC7WG00FU documents by type
Datasheet 2
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the high‑level output current of the TC7WGOOFU/FK?
It can source up to +8 mA (minimum) at a 3 V supply.
What voltage range can the device operate in?
The device operates from 0.9 V up to 3.6 V.