This document describes the features of Toshiba's TC7WG00FU and TC7WG00FK models. These two models are dual 2-input NAND gates, with features such as high-level output current, high-speed operation, and wide operating voltage range.
The TC7WGOOFU/FK is a CMOS dual 2‑input NAND gate designed for general electronics applications. It offers high‑level output current of 8 mA at a 3 V supply and operates over a wide voltage range of 0.9 V to 3.6 V, with typical propagation delay of 2.5 ns at 3.3 V.
The device is supplied in two SSOP‑8 packages (0.65 mm and 0.50 mm lead pitch) with typical weights of 0.02 g and 0.01 g respectively. The datasheet includes absolute maximum ratings, electrical characteristics, AC characteristics, and a list of usage restrictions for safety‑critical applications.
| High‑level output current | +8 mA (min) at Vcc = 3 V |
|---|---|
| Operating voltage range | 0.9 V ~ 3.6 V |
| Propagation delay (typ.) | 2.5 ns at Vcc = 3.3 V, 15 pF |
| Package type | SSOP‑8 0.65 mm pitch (typical weight 0.02 g) |
| Package type | SSOP‑8 0.50 mm pitch (typical weight 0.01 g) |
It can source up to +8 mA (minimum) at a 3 V supply.
The device operates from 0.9 V up to 3.6 V.
It is offered in SSOP‑8 packages with 0.65 mm or 0.50 mm lead pitch.
Yes, it is not intended for safety‑critical or high‑reliability applications such as medical, aerospace, or traffic‑signal equipment.