STB21NM50N is a N-channel 500V-0.15Ω-18A MOSFET from ST company, using the second generation MDmesh technology, with 100% avalanche tested, low input capacitance and gate charge, low gate input resistance, suitable for high efficiency converters.
This document describes the STx21NM50N family of N-channel MOSFETs, which utilize the second generation of MDmesh Technology. This technology combines a new vertical structure with a strip layout to achieve very low on-resistance and gate charge, making the devices suitable for high-efficiency converters.
The maximum operating junction temperature is 150°C.