The STB21NM50N is a ST company's N-channel 500V low-resistance switch power MOSFET. It features 100% avalanche testing, low input capacitance and gate charge, low gate input resistance, and is suitable for the most demanding high efficiency converters applications
The document provides detailed specifications for a family of N‑channel 500 V Power MOSFETs (STP/F21NM50N, STW21NM50N, STB21NM50N, STB21NM50N‑1) based on STMicroelectronics' second‑generation MDmesh™ technology. It lists absolute maximum ratings, thermal data, avalanche characteristics, and dynamic parameters for each part number.
The datasheet includes tables of electrical ratings, characteristic curves, package mechanical data, and a revision history. It is intended for designers who need precise performance data for high‑efficiency converter applications.
| Drain‑source voltage (VDS) | 500 V |
|---|---|
| Continuous drain current (Id) at 25 °C | 18 A |
| Total dissipation (PD) at 25 °C | 140 W |
| Thermal resistance junction‑case (RθJC) | 0.89 °C/W |
| Avalanche current (IAval) | 9 A |
| Total gate charge (Qg) | 65 nC |
| Input capacitance (Ciss) | 1950 pF |
| Output capacitance (Coss) | 420 pF |
The maximum drain‑source voltage is 500 V.
The device can handle a continuous drain current of 18 A at 25 °C.
The total power dissipation rating is 140 W at 25 °C.
The avalanche current rating is 9 A.