Key facts
- Brand
- STMicroelectronics
- Model
- STB21NM50N-1
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-08-07
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DatasheetST STP21NM50N/STF21NM50N/STW21NM50N/STB21NM50N/STB21NM50N-1 handbook
ST STP21NM50N/STF21NM50N/STW21NM50N/STB21NM50N/STB21NM50N-1 handbook
Datasheet
STB21NM50N is a N-channel 500V-0.15Ω-18A MOSFET from ST company, using the second generation MDmesh technology, with 100% avalanche tested, low input capacitance and gate charge, low gate input resistance, suitable for high efficiency converters.
Read onlineSTMicroelectronics STB21NM50N-1 specifications
| Drain‑source voltage (VDS) | 500 V |
|---|---|
| Continuous drain current (Id) at 25 °C | 18 A |
| Total dissipation (PD) at 25 °C | 140 W |
| Thermal resistance junction‑case (RθJC) | 0.89 °C/W |
| Avalanche current (IAval) | 9 A |
| Total gate charge (Qg) | 65 nC |
| Input capacitance (Ciss) | 1950 pF |
| Output capacitance (Coss) | 420 pF |
Source: STMicroelectronics STP/F21NM50N, STW21NM50N, STB21NM50N, STB21NM50N-1 Datasheet
All STMicroelectronics STB21NM50N-1 documents by type
Datasheet 1
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage for these MOSFETs?
The maximum drain‑source voltage is 500 V.
From: STMicroelectronics STP/F21NM50N, STW21NM50N, STB21NM50N, STB21NM50N-1 Datasheet
What continuous drain current can the device handle at 25 °C?
The device can handle a continuous drain current of 18 A at 25 °C.
From: STMicroelectronics STP/F21NM50N, STW21NM50N, STB21NM50N, STB21NM50N-1 Datasheet