Key facts
- Brand
- Samsung
- Model
- K5T6432YT
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-01
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Samsung K5T6432YT(B)M Multi-Chip Package Memory Datasheet
The K5T6432YT(B)M is a multi‑chip package memory that combines a 64 Mbit four‑bank NOR flash and a 32 Mbit UtRAM, both organized as 16‑bit words. It operates from a single 2.7 V to 3.3 V supply and is offered in an 81‑ball TBGA package with a 0.8 mm pitch.
The document provides detailed electrical characteristics, memory organization, timing diagrams, package dimensions, and block address tables for both flash and UtRAM sections, targeting mobile communication system applications where low standby current and deep power‑down modes are required.
Samsung K5T6432YT specifications
| Operating voltage | 2.7 V to 3.3 V |
|---|---|
| Flash organization | 4,194,304 × 16 bit |
| UtRAM organization | 2,097,152 × 16 bit |
| Flash access time | 85 ns |
| UtRAM access time | 100 ns |
| Flash read current | 20 mA @5 MHz |
| Sequential page read current | 5 mA @5 MHz |
| Program/Erase current | 35 mA (max) |
| Standby / deep‑power‑down current | 0.1 µA |
| UtRAM operating current | 18 mA |
| UtRAM standby current | 120 µA |
| Deep power‑down current | 5 pA |
| Flash bank size | 4 Mb / 4 Mb / 28 Mb / 28 Mb |
| Flash endurance | 100 000 program/erase cycles |
| Ambient temperature range | -25 °C to 85 °C |
| Package type | 81‑ball TBGA, 0.8 mm pitch |
| Package dimensions | 10.8 mm × 10.4 mm (bottom view) |
Source: Samsung K5T6432YT(B)M Multi-Chip Package Memory Datasheet
All Samsung K5T6432YT documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the operating voltage range of the K5T6432YT(B)M?
The device operates from 2.7 V to 3.3 V.
From: Samsung K5T6432YT(B)M Multi-Chip Package Memory Datasheet
What type of package does the K5T6432YT(B)M use?
It is supplied in an 81‑ball TBGA package with a 0.8 mm pitch.
From: Samsung K5T6432YT(B)M Multi-Chip Package Memory Datasheet
What is the operating voltage range for the K5T6432YT(B)M?
The device operates from 2.7 V to 3.3 V.
From: Samsung K5T6432YT(B)M Multi-Chip Package Memory Datasheet
What are the flash and UtRAM capacities of the K5T6432YT(B)M?
It contains a 64 Mbit (4 M × 16) four‑bank flash and a 32 Mbit (2 M × 16) UtRAM.
From: Samsung K5T6432YT(B)M Multi-Chip Package Memory Datasheet