The K5T6432YT(B)M is a Multi Chip Package Memory that combines 64Mbit Four Bank Flash and 32Mbit UtRAM.
The K5T6432YT(B)M is a multi‑chip package memory that combines a 64 Mbit four‑bank NOR flash and a 32 Mbit UtRAM, both organized as 16‑bit words. It operates from a single 2.7 V to 3.3 V supply and is offered in an 81‑ball TBGA package (0.8 mm pitch, 10.8 × 10.4 mm). The device targets mobile communication systems where high‑performance non‑volatile storage and low standby power are required.
The datasheet provides detailed electrical characteristics, timing diagrams, block address maps for both top‑boot and bottom‑boot flash blocks, and mechanical dimensions. It also lists ordering information and package drawing specifications.
| Power Supply Voltage | 2.7 V to 3.3 V |
|---|---|
| Flash Organization | 4,194,304 × 16 bit (64 Mbit) |
| UtRAM Organization | 2,097,152 × 16 bit (32 Mbit) |
| Flash Access Time | 85 ns |
| Flash Read Current | 20 mA @5 MHz |
| Program/Erase Current | 35 mA (max) |
| Standby Current (Flash) | 0.1 µA |
| UtRAM Operating Current | 18 mA |
| UtRAM Standby Current | 120 µA |
| Deep Power‑Down Current (UtRAM) | 5 pA |
| Flash Endurance | 100,000 Program/Erase cycles |
| Ambient Temperature Range | -25 °C to 85 °C |
| Package Type | 81‑ball TBGA, 0.8 mm pitch |
The device operates from 2.7 V to 3.3 V.
It contains a 64 Mbit (4 M × 16) four‑bank flash and a 32 Mbit (2 M × 16) UtRAM.
The memory is supplied in an 81‑ball TBGA package with 0.8 mm pitch, measuring 10.8 mm × 10.4 mm.
The flash memory is rated for 100,000 program/erase cycles.